Show Hamamatsu Avalanche Photo Diode 1620018359
This is all the information about APD 1620018359. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1620018359 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B09 |
Break-through voltage: |
424 V |
Voltage for Gain 100 (T=+25°C): |
395.6 V |
Dark current: |
4.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
306 |
Position in Box: |
15 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10377 |
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Shipment: |
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Grid number: |
494 |
Position in grid: |
17 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
10. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
10. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
395.6 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 396.1262556 V T = -25 °C: 359.5331275 V |
Voltage for Gain 150: |
T = +20 °C: 404.0873159 V T = -25 °C: 367.3438783 V |
Voltage for Gain 200: |
T = +20 °C: 408.5136545 V T = -25 °C: 371.7065633 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.475716165 V-1 T = -25 °C: 4.465317954 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.683145769 V-1 T = -25 °C: 8.578423945 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.98693093 V-1 T = -25 °C: 14.74563039 V-1 |
Break-through voltage: |
T = +20 °C: 422.2925201 V T = -25 °C: 387.7496399 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history