Show Hamamatsu Avalanche Photo Diode 1620018356
This is all the information about APD 1620018356. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1620018356 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1704018671/1620018356 |
| Unit: |
#3793 (barcode 1309039180) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C03 |
| Break-through voltage: |
421 V |
| Voltage for Gain 100 (T=+25°C): |
393.6 V |
| Dark current: |
4.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
306 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10377 |
| |
|
| Shipment: |
|
| Grid number: |
494 |
| Position in grid: |
14 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
393.6 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.3895085 V T = -25 °C: 356.844019 V |
| Voltage for Gain 150: |
T = +20 °C: 401.3514984 V T = -25 °C: 364.5139292 V |
| Voltage for Gain 200: |
T = +20 °C: 405.7614447 V T = -25 °C: 368.8122192 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.444577583 V-1 T = -25 °C: 4.804838967 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.529091215 V-1 T = -25 °C: 8.656865834 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.75251394 V-1 T = -25 °C: 15.0207427 V-1 |
| Break-through voltage: |
T = +20 °C: 419.9913062 V T = -25 °C: 383.7934291 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
