Show Hamamatsu Avalanche Photo Diode 1620018346
This is all the information about APD 1620018346. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1620018346 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D02 |
Break-through voltage: |
424 V |
Voltage for Gain 100 (T=+25°C): |
395.1 V |
Dark current: |
6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
306 |
Position in Box: |
4 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10377 |
|
|
Shipment: |
|
Grid number: |
494 |
Position in grid: |
5 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
10. Nov 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
10. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
395.1 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 395.6024565 V T = -25 °C: 359.1038774 V |
Voltage for Gain 150: |
T = +20 °C: 403.621251 V T = -25 °C: 366.8389206 V |
Voltage for Gain 200: |
T = +20 °C: 408.0659569 V T = -25 °C: 371.1806668 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.297038485 V-1 T = -25 °C: 4.643458168 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.094385982 V-1 T = -25 °C: 9.108262041 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.03388754 V-1 T = -25 °C: 14.13659468 V-1 |
Break-through voltage: |
T = +20 °C: 423.3761266 V T = -25 °C: 386.9897081 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history