Show Hamamatsu Avalanche Photo Diode 1618018231
This is all the information about APD 1618018231. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1618018231 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G06 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
386.7 V |
Dark current: |
5.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
300 |
Position in Box: |
39 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10368 |
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Shipment: |
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Grid number: |
484 |
Position in grid: |
5 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
17. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
386.7 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 387.7729773 V T = -25 °C: 351.8333788 V |
Voltage for Gain 150: |
T = +20 °C: 395.6972925 V T = -25 °C: 359.6982348 V |
Voltage for Gain 200: |
T = +20 °C: 400.0998339 V T = -25 °C: 363.9191888 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.628741267 V-1 T = -25 °C: 4.815426183 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.117533992 V-1 T = -25 °C: 10.17621795 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.22086579 V-1 T = -25 °C: 15.02594954 V-1 |
Break-through voltage: |
T = +20 °C: 414.945141 V T = -25 °C: 378.8361975 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history