Show Hamamatsu Avalanche Photo Diode 1612017712
This is all the information about APD 1612017712. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1612017712 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F11 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.5 V |
| Dark current: |
6.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
301 |
| Position in Box: |
20 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10369 |
| |
|
| Shipment: |
|
| Grid number: |
465 |
| Position in grid: |
17 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
394.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.8961628 V T = -25 °C: 358.2856209 V |
| Voltage for Gain 150: |
T = +20 °C: 402.8096307 V T = -25 °C: 366.0436849 V |
| Voltage for Gain 200: |
T = +20 °C: 407.2057203 V T = -25 °C: 370.3954011 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.587853445 V-1 T = -25 °C: 4.578108283 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.038549752 V-1 T = -25 °C: 8.990348855 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.0285996 V-1 T = -25 °C: 15.66826962 V-1 |
| Break-through voltage: |
T = +20 °C: 423.1434595 V T = -25 °C: 386.4368614 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
