Show Hamamatsu Avalanche Photo Diode 1612017706
This is all the information about APD 1612017706. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1612017706 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1612017706/0814008287 |
| Unit: |
#2711 (barcode 1309032242) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A06 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
391.4 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
301 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10369 |
| |
|
| Shipment: |
|
| Grid number: |
465 |
| Position in grid: |
11 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
391.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.0371319 V T = -25 °C: 354.879151 V |
| Voltage for Gain 150: |
T = +20 °C: 399.0680074 V T = -25 °C: 362.5515088 V |
| Voltage for Gain 200: |
T = +20 °C: 403.5325071 V T = -25 °C: 366.8395562 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.473703038 V-1 T = -25 °C: 4.782482748 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.680415739 V-1 T = -25 °C: 9.51589281 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.96255008 V-1 T = -25 °C: 14.83229094 V-1 |
| Break-through voltage: |
T = +20 °C: 417.976743 V T = -25 °C: 381.4845947 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
