Show Hamamatsu Avalanche Photo Diode 1612017700
This is all the information about APD 1612017700. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1612017700 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C05 |
Break-through voltage: |
423 V |
Voltage for Gain 100 (T=+25°C): |
393.6 V |
Dark current: |
4.3 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
301 |
Position in Box: |
8 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10369 |
|
|
Shipment: |
|
Grid number: |
465 |
Position in grid: |
5 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
17. Nov 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
393.6 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 394.0306433 V T = -25 °C: 357.3763745 V |
Voltage for Gain 150: |
T = +20 °C: 402.008398 V T = -25 °C: 365.1172207 V |
Voltage for Gain 200: |
T = +20 °C: 406.4529381 V T = -25 °C: 369.4710243 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.508042588 V-1 T = -25 °C: 4.578732932 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.793947529 V-1 T = -25 °C: 8.908844361 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.23083192 V-1 T = -25 °C: 15.46284922 V-1 |
Break-through voltage: |
T = +20 °C: 422.2692218 V T = -25 °C: 385.4252306 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history