Show Hamamatsu Avalanche Photo Diode 1612017699
This is all the information about APD 1612017699. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1612017699 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E04 |
Break-through voltage: |
423 V |
Voltage for Gain 100 (T=+25°C): |
394.1 V |
Dark current: |
5.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
301 |
Position in Box: |
7 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10369 |
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Shipment: |
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Grid number: |
465 |
Position in grid: |
4 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
17. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
394.1 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 394.2358233 V T = -25 °C: 357.6922536 V |
Voltage for Gain 150: |
T = +20 °C: 402.2270575 V T = -25 °C: 365.419146 V |
Voltage for Gain 200: |
T = +20 °C: 406.6739456 V T = -25 °C: 369.7583538 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.492766636 V-1 T = -25 °C: 4.50698313 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.712012263 V-1 T = -25 °C: 8.799592089 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.17333651 V-1 T = -25 °C: 15.34395007 V-1 |
Break-through voltage: |
T = +20 °C: 422.8299332 V T = -25 °C: 385.9238938 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history