Show Hamamatsu Avalanche Photo Diode 1605017127
This is all the information about APD 1605017127. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1605017127 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C10 |
Break-through voltage: |
428 V |
Voltage for Gain 100 (T=+25°C): |
398.9 V |
Dark current: |
3.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
301 |
Position in Box: |
28 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10369 |
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Shipment: |
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Grid number: |
443 |
Position in grid: |
8 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
17. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
398.9 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 399.9941545 V T = -25 °C: 363.4235936 V |
Voltage for Gain 150: |
T = +20 °C: 407.8172984 V T = -25 °C: 371.1224718 V |
Voltage for Gain 200: |
T = +20 °C: 412.1469793 V T = -25 °C: 375.4188894 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.623654161 V-1 T = -25 °C: 4.561274614 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.222696972 V-1 T = -25 °C: 9.061993435 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.44873591 V-1 T = -25 °C: 14.09801373 V-1 |
Break-through voltage: |
T = +20 °C: 427.289194 V T = -25 °C: 390.6395374 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history