Show Hamamatsu Avalanche Photo Diode 1605017119
This is all the information about APD 1605017119. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1605017119 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G08 |
| Break-through voltage: |
427 V |
| Voltage for Gain 100 (T=+25°C): |
398.7 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
301 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10369 |
| |
|
| Shipment: |
|
| Grid number: |
443 |
| Position in grid: |
0 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
398.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 399.6610509 V T = -25 °C: 363.0330511 V |
| Voltage for Gain 150: |
T = +20 °C: 407.4727452 V T = -25 °C: 370.7361189 V |
| Voltage for Gain 200: |
T = +20 °C: 411.7882024 V T = -25 °C: 375.0212149 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.416343291 V-1 T = -25 °C: 4.694083224 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.617622755 V-1 T = -25 °C: 9.338409463 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.00619772 V-1 T = -25 °C: 14.66488776 V-1 |
| Break-through voltage: |
T = +20 °C: 422.5513598 V T = -25 °C: 390.6650314 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
