Show Hamamatsu Avalanche Photo Diode 1604017031
This is all the information about APD 1604017031. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1604017031 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1604017031/1706018808 |
| Unit: |
#2399 (barcode 1309032006) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B07 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
391.8 V |
| Dark current: |
7.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
301 |
| Position in Box: |
43 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10370 |
| |
|
| Shipment: |
|
| Grid number: |
439 |
| Position in grid: |
4 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
391.8 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.2492223 V T = -25 °C: 356.0138655 V |
| Voltage for Gain 150: |
T = +20 °C: 400.1493701 V T = -25 °C: 363.5681442 V |
| Voltage for Gain 200: |
T = +20 °C: 404.5333843 V T = -25 °C: 367.8304581 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.46442646 V-1 T = -25 °C: 4.876727117 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.75694255 V-1 T = -25 °C: 9.605353926 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.24615876 V-1 T = -25 °C: 14.4942671 V-1 |
| Break-through voltage: |
T = +20 °C: 418.6470287 V T = -25 °C: 383.0173204 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
