Show Hamamatsu Avalanche Photo Diode 1603016933
This is all the information about APD 1603016933. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1603016933 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D04 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
390.3 V |
| Dark current: |
6.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
324 |
| Position in Box: |
32 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10498 |
| |
|
| Shipment: |
|
| Grid number: |
435 |
| Position in grid: |
9 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
390.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.5838741 V T = -25 °C: 355.5654758 V |
| Voltage for Gain 150: |
T = +20 °C: 402.464895 V T = -25 °C: 364.8431851 V |
| Voltage for Gain 200: |
T = +20 °C: 406.82529 V T = -25 °C: 368.8111963 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.362698122 V-1 T = -25 °C: 14.87613924 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.581694453 V-1 T = -25 °C: 13.09659296 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.87101424 V-1 T = -25 °C: 27.13899143 V-1 |
| Break-through voltage: |
T = +20 °C: 421.3697092 V T = -25 °C: 385.3586169 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
