Show Hamamatsu Avalanche Photo Diode 1603016924
This is all the information about APD 1603016924. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1603016924 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C08 |
Break-through voltage: |
419 V |
Voltage for Gain 100 (T=+25°C): |
390.8 V |
Dark current: |
6.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
302 |
Position in Box: |
7 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10498 |
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Shipment: |
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Grid number: |
435 |
Position in grid: |
0 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
10. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
10. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
390.8 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 392.2109568 V T = -25 °C: 355.8702219 V |
Voltage for Gain 150: |
T = +20 °C: 400.1499239 V T = -25 °C: 363.4398671 V |
Voltage for Gain 200: |
T = +20 °C: 404.5581828 V T = -25 °C: 367.7331602 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.489805362 V-1 T = -25 °C: 4.915153364 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.783072659 V-1 T = -25 °C: 8.606937628 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.22981808 V-1 T = -25 °C: 14.68258257 V-1 |
Break-through voltage: |
T = +20 °C: 419.3997774 V T = -25 °C: 382.7922708 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history