Show Hamamatsu Avalanche Photo Diode 1602016856
This is all the information about APD 1602016856. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1602016856 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.3 V |
| Dark current: |
7.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
269 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10493 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 395.1435047 V T = -25 °C: 358.2151592 V |
| Voltage for Gain 150: |
T = +20 °C: 403.0208612 V T = -25 °C: 366.1004031 V |
| Voltage for Gain 200: |
T = +20 °C: 407.4074494 V T = -25 °C: 372.3013068 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.534591529 V-1 T = -25 °C: 4.49290329 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.955725103 V-1 T = -25 °C: 8.86015816 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.8048178 V-1 T = -25 °C: 208.097955 V-1 |
| Break-through voltage: |
T = +20 °C: 418.4000254 V T = -25 °C: 386.5441428 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
