Show Hamamatsu Avalanche Photo Diode 1602016815
This is all the information about APD 1602016815. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1602016815 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E01 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
385.4 V |
Dark current: |
6.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
46 |
Position in Box: |
22 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10075 |
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Shipment: |
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Grid number: |
430 |
Position in grid: |
16 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
16. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
29. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
30. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 386.3314515 V T = -25 °C: 350.2813251 V |
Voltage for Gain 150: |
T = +20 °C: 394.3261558 V T = -25 °C: 357.8669861 V |
Voltage for Gain 200: |
T = +20 °C: 398.8219323 V T = -25 °C: 362.1534988 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.119236685 V-1 T = -25 °C: 4.88571074 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.000878388 V-1 T = -25 °C: 9.095552198 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.19049777 V-1 T = -25 °C: 15.29976139 V-1 |
Break-through voltage: |
T = +20 °C: 413.6863407 V T = -25 °C: 377.2313935 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history