Show Hamamatsu Avalanche Photo Diode 1601016779 - Archived data from Fri, 29. September 2017 13:46:17 CEST
This is all the information about APD 1601016779. If it is wrong, edit the data.
| Subdetector specification: | |
|---|---|
| Serial: | 1601016779 |
| Type: | Hamamatsu Avalanche Photo Diode |
| Detector: | unassigned |
| Unit: | unassigned |
| Preamp: | 0 |
| Current location: | unknown |
| Installation information: | |
| Label: | none |
| Manufacturer information: | |
| Wafer position: | E12 |
| Break-through voltage: | 425 V |
| Voltage for Gain 100 (T=+25°C): | 396.9 V |
| Dark current: | 5.9 nA |
| Screening Logistics: | |
| Available: | Yes |
| Storage Box: | none |
| Position in Box: | none |
| EP1 batch: | none |
| EP1 batch after irradiation: | none |
| Shipment: | |
| Grid number: | 428 |
| Position in grid: | 1 |
| Arrival for irradiation: | 29. Sep 2017 |
| Sent for analysis after irradiation: | none |
| Return for assembly: | none |
| Irradiation: | |
| Date: | none |
| Dose used: | none |
| Temperature: | none |
| Position: | none |
| Bias voltage: | none |
| Annealing: | |
| Date: | none |
| Temperature: | none |
| Duration: | none |
| Measurement results: | |
| Voltage for Gain 100: | T = +20 °C: none T = -25 °C: none |
| Voltage for Gain 150: | T = +20 °C: none T = -25 °C: none |
| Voltage for Gain 200: | T = +20 °C: none T = -25 °C: none |
| Gain/Voltage slope at M = 100: | T = +20 °C: none T = -25 °C: none |
| Gain/Voltage slope at M = 150: | T = +20 °C: none T = -25 °C: none |
| Gain/Voltage slope at M = 200: | T = +20 °C: none T = -25 °C: none |
| Break-through voltage: | T = +20 °C: none T = -25 °C: none |
| Notes: |
Version history
| Time | Author | Change comment |
|---|---|---|
| 26. Nov 2018 15:12:25 CET | markus.moritz | |
| 29. Sep 2017 13:46:17 CEST | markus.moritz | Entered arrival for irradiation date. |
| 01. Aug 2016 17:29:52 CEST | Tobias | Assigned to grid via information extracted from APD DB. |
| 23. Jun 2016 10:42:18 CEST | Tobias | Imported from Hamamatsu datasheet. |