Show Hamamatsu Avalanche Photo Diode 1601016755
This is all the information about APD 1601016755. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1601016755 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E05 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386.3 V |
| Dark current: |
6.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
35 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10056 |
| |
|
| Shipment: |
|
| Grid number: |
426 |
| Position in grid: |
19 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
16. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.7963229 V T = -25 °C: 350.5054241 V |
| Voltage for Gain 150: |
T = +20 °C: 394.70185 V T = -25 °C: 358.0952108 V |
| Voltage for Gain 200: |
T = +20 °C: 399.0870682 V T = -25 °C: 362.3729919 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.547576857 V-1 T = -25 °C: 4.774737742 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.54617067 V-1 T = -25 °C: 9.040224277 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.17589074 V-1 T = -25 °C: 14.30070278 V-1 |
| Break-through voltage: |
T = +20 °C: 414.7308181 V T = -25 °C: 377.9809794 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
