Show Hamamatsu Avalanche Photo Diode 1601016754
This is all the information about APD 1601016754. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1601016754 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B06 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
387.8 V |
Dark current: |
6.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
361 |
Position in Box: |
42 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10553 |
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Shipment: |
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Grid number: |
426 |
Position in grid: |
18 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
16. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.1127897 V T = -25 °C: 351.7991975 V |
Voltage for Gain 150: |
T = +20 °C: 395.9521976 V T = -25 °C: 359.3928969 V |
Voltage for Gain 200: |
T = +20 °C: 400.3058482 V T = -25 °C: 363.6495632 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.56885698 V-1 T = -25 °C: 4.876388887 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.098068423 V-1 T = -25 °C: 8.885009914 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.18742547 V-1 T = -25 °C: 15.67402183 V-1 |
Break-through voltage: |
T = +20 °C: 415.1264096 V T = -25 °C: 379.0637626 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history