Show Hamamatsu Avalanche Photo Diode 1601016749
This is all the information about APD 1601016749. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1601016749 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.2 V |
| Dark current: |
6.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
34 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10056 |
| |
|
| Shipment: |
|
| Grid number: |
426 |
| Position in grid: |
13 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
16. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.196727 V T = -25 °C: 351.751217 V |
| Voltage for Gain 150: |
T = +20 °C: 396.1404687 V T = -25 °C: 359.3955795 V |
| Voltage for Gain 200: |
T = +20 °C: 400.5486726 V T = -25 °C: 363.7047898 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.431221833 V-1 T = -25 °C: 4.691543179 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.085734202 V-1 T = -25 °C: 8.802547603 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.41872224 V-1 T = -25 °C: 15.70458501 V-1 |
| Break-through voltage: |
T = +20 °C: 415.695733 V T = -25 °C: 378.7528267 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
