Show Hamamatsu Avalanche Photo Diode 0710006253
This is all the information about APD 0710006253. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0710006253 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B10 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386.5 V |
| Dark current: |
25.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
376 |
| Position in Box: |
31 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
44 |
| Position in grid: |
10 |
| Arrival for irradiation: |
20. Jun 2016 |
| Sent for analysis after irradiation: |
08. Jul 2016 |
| Return for assembly: |
04. Aug 2016 |
| |
|
| Irradiation: |
|
| Date: |
30. Jun 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
01. Jul 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.3057089 V T = -25 °C: 350.5129702 V |
| Voltage for Gain 150: |
T = +20 °C: 394.2009061 V T = -25 °C: 357.933425 V |
| Voltage for Gain 200: |
T = +20 °C: 398.5896658 V T = -25 °C: 362.0928825 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.471875926 V-1 T = -25 °C: 4.757363202 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.8580471 V-1 T = -25 °C: 9.638889805 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.63242612 V-1 T = -25 °C: 15.28009313 V-1 |
| Break-through voltage: |
T = +20 °C: 414.1956887 V T = -25 °C: 377.5349 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
