Show Hamamatsu Avalanche Photo Diode 1503016694
This is all the information about APD 1503016694. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1503016694 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D03 |
Break-through voltage: |
418 V |
Voltage for Gain 100 (T=+25°C): |
388.8 V |
Dark current: |
4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
39 |
Position in Box: |
36 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10064 |
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Shipment: |
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Grid number: |
424 |
Position in grid: |
8 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
16. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
28. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
30. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 389.001759 V T = -25 °C: 352.778676 V |
Voltage for Gain 150: |
T = +20 °C: 396.9996098 V T = -25 °C: 360.4188949 V |
Voltage for Gain 200: |
T = +20 °C: 401.4337216 V T = -25 °C: 364.7339103 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.393695047 V-1 T = -25 °C: 4.705429518 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.154918822 V-1 T = -25 °C: 9.083693845 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.87736622 V-1 T = -25 °C: 15.41882596 V-1 |
Break-through voltage: |
T = +20 °C: 417.3411136 V T = -25 °C: 380.7683537 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history