Show Hamamatsu Avalanche Photo Diode 1503016676
This is all the information about APD 1503016676. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1503016676 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D15 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
389.7 V |
Dark current: |
7.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
39 |
Position in Box: |
23 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10064 |
|
|
Shipment: |
|
Grid number: |
430 |
Position in grid: |
5 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
16. Jan 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 389.5192516 V T = -25 °C: 353.1285088 V |
Voltage for Gain 150: |
T = +20 °C: 397.4096571 V T = -25 °C: 360.7182309 V |
Voltage for Gain 200: |
T = +20 °C: 401.7824651 V T = -25 °C: 364.9680213 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.585901191 V-1 T = -25 °C: 4.588311857 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.915055994 V-1 T = -25 °C: 8.94750682 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.28949319 V-1 T = -25 °C: 15.24565971 V-1 |
Break-through voltage: |
T = +20 °C: 414.5981405 V T = -25 °C: 378.3495365 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history