Show Hamamatsu Avalanche Photo Diode 1503016660
This is all the information about APD 1503016660. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1503016660 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C12 |
Break-through voltage: |
426 V |
Voltage for Gain 100 (T=+25°C): |
397.4 V |
Dark current: |
3.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
302 |
Position in Box: |
43 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10372 |
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Shipment: |
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Grid number: |
429 |
Position in grid: |
10 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
10. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
08. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
2 |
Bias voltage: |
397.4 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 398.0025711 V T = -25 °C: 361.5195674 V |
Voltage for Gain 150: |
T = +20 °C: 405.8680316 V T = -25 °C: 369.3107972 V |
Voltage for Gain 200: |
T = +20 °C: 410.2262998 V T = -25 °C: 373.6808753 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.588407044 V-1 T = -25 °C: 4.485180699 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.110314227 V-1 T = -25 °C: 8.777892927 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.18290623 V-1 T = -25 °C: 15.07455293 V-1 |
Break-through voltage: |
T = +20 °C: 426.8343585 V T = -25 °C: 389.7801033 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history