Show Hamamatsu Avalanche Photo Diode 1502016610
This is all the information about APD 1502016610. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016610 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D12 |
| Break-through voltage: |
425 V |
| Voltage for Gain 100 (T=+25°C): |
396.4 V |
| Dark current: |
4.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
303 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10372 |
| |
|
| Shipment: |
|
| Grid number: |
422 |
| Position in grid: |
11 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
396.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.0193648 V T = -25 °C: 360.3562477 V |
| Voltage for Gain 150: |
T = +20 °C: 404.9758629 V T = -25 °C: 368.1257476 V |
| Voltage for Gain 200: |
T = +20 °C: 409.4003397 V T = -25 °C: 372.4669667 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.515647074 V-1 T = -25 °C: 4.545154309 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.820934763 V-1 T = -25 °C: 8.844075076 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.3445738 V-1 T = -25 °C: 15.44731553 V-1 |
| Break-through voltage: |
T = +20 °C: 424.8655067 V T = -25 °C: 388.2624708 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
