Show Hamamatsu Avalanche Photo Diode 1502016580
This is all the information about APD 1502016580. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016580 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E04 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
31 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10050 |
| |
|
| Shipment: |
|
| Grid number: |
421 |
| Position in grid: |
3 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.318844 V T = -25 °C: 350.2271842 V |
| Voltage for Gain 150: |
T = +20 °C: 394.2245862 V T = -25 °C: 357.7861191 V |
| Voltage for Gain 200: |
T = +20 °C: 398.614859 V T = -25 °C: 362.0546499 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.38243496 V-1 T = -25 °C: 4.62162017 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.188973476 V-1 T = -25 °C: 9.009634158 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.06364888 V-1 T = -25 °C: 15.41704052 V-1 |
| Break-through voltage: |
T = +20 °C: 414.2530913 V T = -25 °C: 377.9266404 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
