Show Hamamatsu Avalanche Photo Diode 1502016576
This is all the information about APD 1502016576. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1502016576 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 1414016121/1502016576 |
Unit: |
#3910 (barcode 1309039234) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
E10 |
Break-through voltage: |
419 V |
Voltage for Gain 100 (T=+25°C): |
391.7 V |
Dark current: |
5 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
31 |
Position in Box: |
7 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10050 |
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Shipment: |
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Grid number: |
420 |
Position in grid: |
19 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
05. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 391.6163481 V T = -25 °C: 355.0777083 V |
Voltage for Gain 150: |
T = +20 °C: 399.5790077 V T = -25 °C: 362.7576947 V |
Voltage for Gain 200: |
T = +20 °C: 404.0085836 V T = -25 °C: 367.0815627 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.589070066 V-1 T = -25 °C: 4.653275819 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.958650771 V-1 T = -25 °C: 9.041306966 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.40886246 V-1 T = -25 °C: 15.6345068 V-1 |
Break-through voltage: |
T = +20 °C: 418.5903682 V T = -25 °C: 382.0289774 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history