Show Hamamatsu Avalanche Photo Diode 1501016479
This is all the information about APD 1501016479. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1501016479 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E05 |
| Break-through voltage: |
421 V |
| Voltage for Gain 100 (T=+25°C): |
392.6 V |
| Dark current: |
3.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
30 |
| Position in Box: |
28 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10049 |
| |
|
| Shipment: |
|
| Grid number: |
416 |
| Position in grid: |
14 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.5287203 V T = -25 °C: 355.9186713 V |
| Voltage for Gain 150: |
T = +20 °C: 400.5282516 V T = -25 °C: 363.6020359 V |
| Voltage for Gain 200: |
T = +20 °C: 404.9767098 V T = -25 °C: 367.9214215 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.513930101 V-1 T = -25 °C: 4.620999951 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.643531047 V-1 T = -25 °C: 8.875654122 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.45785029 V-1 T = -25 °C: 14.91162351 V-1 |
| Break-through voltage: |
T = +20 °C: 420.6269186 V T = -25 °C: 383.8105924 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
