Show Hamamatsu Avalanche Photo Diode 1417016445
This is all the information about APD 1417016445. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1417016445 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B12 |
Break-through voltage: |
427 V |
Voltage for Gain 100 (T=+25°C): |
398.8 V |
Dark current: |
7.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
303 |
Position in Box: |
28 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10373 |
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Shipment: |
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Grid number: |
415 |
Position in grid: |
15 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
26. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
398.8 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 398.8713173 V T = -25 °C: 362.4473268 V |
Voltage for Gain 150: |
T = +20 °C: 406.8192974 V T = -25 °C: 370.1641776 V |
Voltage for Gain 200: |
T = +20 °C: 411.2254996 V T = -25 °C: 374.4830836 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.572157399 V-1 T = -25 °C: 4.56015817 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.014747165 V-1 T = -25 °C: 8.893542005 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.0001923 V-1 T = -25 °C: 15.6099717 V-1 |
Break-through voltage: |
T = +20 °C: 427.1058265 V T = -25 °C: 390.3757951 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history