Show Hamamatsu Avalanche Photo Diode 1417016439
This is all the information about APD 1417016439. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1417016439 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H07 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
389.5 V |
Dark current: |
4.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
303 |
Position in Box: |
23 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10373 |
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Shipment: |
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Grid number: |
415 |
Position in grid: |
9 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
26. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
389.5 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 390.0990435 V T = -25 °C: 354.0981282 V |
Voltage for Gain 150: |
T = +20 °C: 398.1067506 V T = -25 °C: 361.7332225 V |
Voltage for Gain 200: |
T = +20 °C: 402.5884313 V T = -25 °C: 366.0204539 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.4970698 V-1 T = -25 °C: 4.751834024 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.734320334 V-1 T = -25 °C: 9.443023475 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.26152906 V-1 T = -25 °C: 14.69803768 V-1 |
Break-through voltage: |
T = +20 °C: 408.0789167 V T = -25 °C: 381.2077563 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history