Show Hamamatsu Avalanche Photo Diode 1417016432
This is all the information about APD 1417016432. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1417016432 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
421 V |
| Voltage for Gain 100 (T=+25°C): |
392.7 V |
| Dark current: |
6.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
377 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
415 |
| Position in grid: |
2 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
392.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.5125202 V T = -25 °C: 356.8288436 V |
| Voltage for Gain 150: |
T = +20 °C: 401.5598446 V T = -25 °C: 364.6320458 V |
| Voltage for Gain 200: |
T = +20 °C: 405.9675024 V T = -25 °C: 368.8999985 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.131917384 V-1 T = -25 °C: 3.953970143 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.667533237 V-1 T = -25 °C: 9.085227228 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.9386744 V-1 T = -25 °C: 15.44186158 V-1 |
| Break-through voltage: |
T = +20 °C: 422.1588509 V T = -25 °C: 383.8322467 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
