Show Hamamatsu Avalanche Photo Diode 1417016398
This is all the information about APD 1417016398. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1417016398 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E15 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
389.5 V |
Dark current: |
9.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
310 |
Position in Box: |
33 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10385 |
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Shipment: |
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Grid number: |
413 |
Position in grid: |
13 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
389.5 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 389.7222192 V T = -25 °C: 353.5028867 V |
Voltage for Gain 150: |
T = +20 °C: 397.5799855 V T = -25 °C: 360.9886727 V |
Voltage for Gain 200: |
T = +20 °C: 401.9083925 V T = -25 °C: 365.176278 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.354806089 V-1 T = -25 °C: 4.676654159 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.527233138 V-1 T = -25 °C: 9.418439232 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.91278027 V-1 T = -25 °C: 14.85016806 V-1 |
Break-through voltage: |
T = +20 °C: 415.1156941 V T = -25 °C: 378.6275464 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history