Show Hamamatsu Avalanche Photo Diode 1417016392
This is all the information about APD 1417016392. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1417016392 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C10 |
Break-through voltage: |
424 V |
Voltage for Gain 100 (T=+25°C): |
395.6 V |
Dark current: |
14.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
377 |
Position in Box: |
16 |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
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Shipment: |
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Grid number: |
413 |
Position in grid: |
8 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
395.6 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 396.9381243 V T = -25 °C: 360.054823 V |
Voltage for Gain 150: |
T = +20 °C: 404.8325062 V T = -25 °C: 367.7561268 V |
Voltage for Gain 200: |
T = +20 °C: 409.2137629 V T = -25 °C: 372.0568499 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.64074514 V-1 T = -25 °C: 4.706953812 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.154449209 V-1 T = -25 °C: 9.32573854 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.06881612 V-1 T = -25 °C: 14.5288897 V-1 |
Break-through voltage: |
T = +20 °C: 423.6332432 V T = -25 °C: 386.7920639 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history