Show Hamamatsu Avalanche Photo Diode 1415016269
This is all the information about APD 1415016269. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1415016269 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F06 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.8 V |
| Dark current: |
4.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
288 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10200 |
| |
|
| Shipment: |
|
| Grid number: |
409 |
| Position in grid: |
8 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
2 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.967476 V T = -25 °C: 351.878893 V |
| Voltage for Gain 150: |
T = +20 °C: 395.8801271 V T = -25 °C: 359.4602144 V |
| Voltage for Gain 200: |
T = +20 °C: 400.2937697 V T = -25 °C: 363.7040032 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.480588346 V-1 T = -25 °C: 4.820895994 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.910801264 V-1 T = -25 °C: 8.799844845 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.78476411 V-1 T = -25 °C: 15.2414629 V-1 |
| Break-through voltage: |
T = +20 °C: 414.4127317 V T = -25 °C: 379.7183076 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
