Show Hamamatsu Avalanche Photo Diode 1415016249
This is all the information about APD 1415016249. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1415016249 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C06 |
Break-through voltage: |
419 V |
Voltage for Gain 100 (T=+25°C): |
390.1 V |
Dark current: |
5.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
310 |
Position in Box: |
14 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10384 |
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Shipment: |
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Grid number: |
408 |
Position in grid: |
8 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
27. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
390.1 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 390.9268573 V T = -25 °C: 354.5403045 V |
Voltage for Gain 150: |
T = +20 °C: 398.8361122 V T = -25 °C: 362.1095025 V |
Voltage for Gain 200: |
T = +20 °C: 403.2401434 V T = -25 °C: 366.3746055 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.530114977 V-1 T = -25 °C: 4.555187334 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.945264932 V-1 T = -25 °C: 9.043256972 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.84514521 V-1 T = -25 °C: 15.82221589 V-1 |
Break-through voltage: |
T = +20 °C: 418.7545755 V T = -25 °C: 382.0579797 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history