Show Hamamatsu Avalanche Photo Diode 1415016227
This is all the information about APD 1415016227. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1415016227 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B08 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
391.2 V |
| Dark current: |
6.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
40 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10065 |
| |
|
| Shipment: |
|
| Grid number: |
407 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.122448 V T = -25 °C: 354.8057002 V |
| Voltage for Gain 150: |
T = +20 °C: 399.0788611 V T = -25 °C: 362.4550226 V |
| Voltage for Gain 200: |
T = +20 °C: 403.4716152 V T = -25 °C: 366.7403069 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.712930807 V-1 T = -25 °C: 4.800188134 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.456999051 V-1 T = -25 °C: 9.661732976 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.50608621 V-1 T = -25 °C: 15.27545777 V-1 |
| Break-through voltage: |
T = +20 °C: 418.7281769 V T = -25 °C: 382.2912138 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
