Show Hamamatsu Avalanche Photo Diode 1414016185
This is all the information about APD 1414016185. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1414016185 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
G12 |
Break-through voltage: |
422 V |
Voltage for Gain 100 (T=+25°C): |
393.6 V |
Dark current: |
5.7 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
380 |
Position in Box: |
43 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10582 |
|
|
Shipment: |
|
Grid number: |
405 |
Position in grid: |
18 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
10. Nov 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
08. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
25 °C |
Position: |
4 |
Bias voltage: |
393.6 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 394.8228635 V T = -25 °C: 358.4743923 V |
Voltage for Gain 150: |
T = +20 °C: 402.5355324 V T = -25 °C: 366.8330914 V |
Voltage for Gain 200: |
T = +20 °C: 406.8615925 V T = -25 °C: 371.0073173 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.271777597 V-1 T = -25 °C: 4.558509447 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.552904585 V-1 T = -25 °C: 9.147595565 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.87062709 V-1 T = -25 °C: 12.83525242 V-1 |
Break-through voltage: |
T = +20 °C: 416.4756967 V T = -25 °C: 385.5632889 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history