Show Hamamatsu Avalanche Photo Diode 1414016182
This is all the information about APD 1414016182. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1414016182 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B08 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.1 V |
| Dark current: |
6.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
380 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10582 |
| |
|
| Shipment: |
|
| Grid number: |
405 |
| Position in grid: |
15 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
25 °C |
| Position: |
4 |
| Bias voltage: |
394.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.8682548 V T = -25 °C: 358.1411904 V |
| Voltage for Gain 150: |
T = +20 °C: 402.686827 V T = -25 °C: 365.7884996 V |
| Voltage for Gain 200: |
T = +20 °C: 407.0368171 V T = -25 °C: 370.0727266 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.496653059 V-1 T = -25 °C: 4.753189422 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.319170109 V-1 T = -25 °C: 9.497960909 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.48496387 V-1 T = -25 °C: 14.52509945 V-1 |
| Break-through voltage: |
T = +20 °C: 422.7890974 V T = -25 °C: 386.1457334 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
