Show Hamamatsu Avalanche Photo Diode 1414016132
This is all the information about APD 1414016132. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1414016132 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G05 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389.1 V |
| Dark current: |
3.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
309 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10383 |
| |
|
| Shipment: |
|
| Grid number: |
403 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
20. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
389.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.0933694 V T = -25 °C: 354.1110764 V |
| Voltage for Gain 150: |
T = +20 °C: 397.9924722 V T = -25 °C: 361.6781907 V |
| Voltage for Gain 200: |
T = +20 °C: 402.3945089 V T = -25 °C: 365.9164212 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.523452255 V-1 T = -25 °C: 4.770636129 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.918651688 V-1 T = -25 °C: 9.559488267 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.79102643 V-1 T = -25 °C: 14.98851692 V-1 |
| Break-through voltage: |
T = +20 °C: 417.2384892 V T = -25 °C: 381.3376974 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history