Show Hamamatsu Avalanche Photo Diode 1413016088
This is all the information about APD 1413016088. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1413016088 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D03 |
Break-through voltage: |
417 V |
Voltage for Gain 100 (T=+25°C): |
388.5 V |
Dark current: |
6.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
38 |
Position in Box: |
39 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10062 |
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Shipment: |
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Grid number: |
402 |
Position in grid: |
3 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
05. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.9337795 V T = -25 °C: 352.8113273 V |
Voltage for Gain 150: |
T = +20 °C: 396.8782775 V T = -25 °C: 360.4156151 V |
Voltage for Gain 200: |
T = +20 °C: 401.2808132 V T = -25 °C: 364.6949702 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.513054042 V-1 T = -25 °C: 4.679348778 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.251672453 V-1 T = -25 °C: 8.776107606 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.62361373 V-1 T = -25 °C: 15.50240423 V-1 |
Break-through voltage: |
T = +20 °C: 416.2244044 V T = -25 °C: 379.7735763 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history