Show Hamamatsu Avalanche Photo Diode 1413016087
This is all the information about APD 1413016087. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1413016087 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F09 |
Break-through voltage: |
418 V |
Voltage for Gain 100 (T=+25°C): |
389.7 V |
Dark current: |
5.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
38 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10062 |
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Shipment: |
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Grid number: |
402 |
Position in grid: |
2 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
05. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 390.2489148 V T = -25 °C: 354.0861295 V |
Voltage for Gain 150: |
T = +20 °C: 398.1639288 V T = -25 °C: 361.7004808 V |
Voltage for Gain 200: |
T = +20 °C: 402.5426455 V T = -25 °C: 365.9865326 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.506218578 V-1 T = -25 °C: 4.670745037 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.433299151 V-1 T = -25 °C: 8.786595529 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.96327752 V-1 T = -25 °C: 15.76619251 V-1 |
Break-through voltage: |
T = +20 °C: 417.8721514 V T = -25 °C: 381.3847449 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history