Show Hamamatsu Avalanche Photo Diode 1412015988
This is all the information about APD 1412015988. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1412015988 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1412015988/2406026366 |
| Unit: |
#2390 (barcode 1309031917) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G06 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
391.1 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
41 |
| Position in Box: |
27 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10067 |
| |
|
| Shipment: |
|
| Grid number: |
397 |
| Position in grid: |
11 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.1005369 V T = -25 °C: 355.8873996 V |
| Voltage for Gain 150: |
T = +20 °C: 400.0083239 V T = -25 °C: 363.5120029 V |
| Voltage for Gain 200: |
T = +20 °C: 404.3676017 V T = -25 °C: 367.8176299 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.44843161 V-1 T = -25 °C: 4.686821279 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.477789743 V-1 T = -25 °C: 8.89079959 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.02393839 V-1 T = -25 °C: 14.18362759 V-1 |
| Break-through voltage: |
T = +20 °C: 419.7810651 V T = -25 °C: 383.4212857 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
