Show Hamamatsu Avalanche Photo Diode 1412015981
This is all the information about APD 1412015981. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1412015981 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C04 |
Break-through voltage: |
422 V |
Voltage for Gain 100 (T=+25°C): |
393.5 V |
Dark current: |
9.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
41 |
Position in Box: |
21 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10067 |
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Shipment: |
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Grid number: |
397 |
Position in grid: |
4 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
26. Nov 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
22. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
23. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 393.7364218 V T = -25 °C: 357.2748844 V |
Voltage for Gain 150: |
T = +20 °C: 401.6936012 V T = -25 °C: 364.9516484 V |
Voltage for Gain 200: |
T = +20 °C: 406.1053575 V T = -25 °C: 369.2802086 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.599248568 V-1 T = -25 °C: 4.502106634 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.187922824 V-1 T = -25 °C: 9.546828968 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.57202023 V-1 T = -25 °C: 13.82068098 V-1 |
Break-through voltage: |
T = +20 °C: 421.8962221 V T = -25 °C: 385.2145371 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history