Show Hamamatsu Avalanche Photo Diode 1412015976
This is all the information about APD 1412015976. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1412015976 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B04 |
Break-through voltage: |
418 V |
Voltage for Gain 100 (T=+25°C): |
391.5 V |
Dark current: |
9.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
37 |
Position in Box: |
32 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10060 |
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Shipment: |
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Grid number: |
396 |
Position in grid: |
19 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
29. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
30. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 391.1926211 V T = -25 °C: 355.1918642 V |
Voltage for Gain 150: |
T = +20 °C: 399.1545013 V T = -25 °C: 362.8324565 V |
Voltage for Gain 200: |
T = +20 °C: 403.5908349 V T = -25 °C: 367.1360921 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.336657696 V-1 T = -25 °C: 4.541896028 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.97586056 V-1 T = -25 °C: 8.686471223 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.15724867 V-1 T = -25 °C: 14.54808305 V-1 |
Break-through voltage: |
T = +20 °C: 416.8634062 V T = -25 °C: 381.4168108 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history