Show Hamamatsu Avalanche Photo Diode 1412015975
This is all the information about APD 1412015975. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1412015975 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F07 |
Break-through voltage: |
422 V |
Voltage for Gain 100 (T=+25°C): |
393.2 V |
Dark current: |
5.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
37 |
Position in Box: |
31 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10060 |
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Shipment: |
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Grid number: |
396 |
Position in grid: |
18 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
03. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
29. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
30. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 393.7112395 V T = -25 °C: 357.4096377 V |
Voltage for Gain 150: |
T = +20 °C: 401.7189499 V T = -25 °C: 365.1366396 V |
Voltage for Gain 200: |
T = +20 °C: 406.1686954 V T = -25 °C: 369.5047146 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.440145683 V-1 T = -25 °C: 4.731808874 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.400785631 V-1 T = -25 °C: 9.077512107 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.85873893 V-1 T = -25 °C: 15.25218405 V-1 |
Break-through voltage: |
T = +20 °C: 421.9804934 V T = -25 °C: 385.4470821 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history