Show Hamamatsu Avalanche Photo Diode 1412015969
This is all the information about APD 1412015969. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1412015969 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A08 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
392.5 V |
| Dark current: |
11.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
37 |
| Position in Box: |
25 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10060 |
| |
|
| Shipment: |
|
| Grid number: |
396 |
| Position in grid: |
12 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.4409868 V T = -25 °C: 356.1052879 V |
| Voltage for Gain 150: |
T = +20 °C: 400.4204207 V T = -25 °C: 363.7897932 V |
| Voltage for Gain 200: |
T = +20 °C: 404.8639682 V T = -25 °C: 368.1249964 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.538351664 V-1 T = -25 °C: 4.549624199 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.640642146 V-1 T = -25 °C: 9.443610065 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.39731101 V-1 T = -25 °C: 14.23536491 V-1 |
| Break-through voltage: |
T = +20 °C: 419.8239839 V T = -25 °C: 383.2339002 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
