Show Hamamatsu Avalanche Photo Diode 1412015950
This is all the information about APD 1412015950. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1412015950 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 1412015950/1803020170 |
Unit: |
#3324 (barcode 1309035526) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
C06 |
Break-through voltage: |
422 V |
Voltage for Gain 100 (T=+25°C): |
392.8 V |
Dark current: |
8.7 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
38 |
Position in Box: |
29 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10062 |
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Shipment: |
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Grid number: |
395 |
Position in grid: |
13 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
16. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
28. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
30. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 393.7305717 V T = -25 °C: 357.1244263 V |
Voltage for Gain 150: |
T = +20 °C: 401.6792868 V T = -25 °C: 364.8293604 V |
Voltage for Gain 200: |
T = +20 °C: 406.0928105 V T = -25 °C: 369.1765714 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.3994858 V-1 T = -25 °C: 4.693638432 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.072017054 V-1 T = -25 °C: 8.790958854 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.35780131 V-1 T = -25 °C: 15.63072903 V-1 |
Break-through voltage: |
T = +20 °C: 421.5784979 V T = -25 °C: 384.8392753 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history