Show Hamamatsu Avalanche Photo Diode 1411015921
This is all the information about APD 1411015921. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1411015921 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D10 |
Break-through voltage: |
420 V |
Voltage for Gain 100 (T=+25°C): |
391.5 V |
Dark current: |
4.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
309 |
Position in Box: |
22 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10382 |
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Shipment: |
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Grid number: |
394 |
Position in grid: |
16 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
19. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
391.5 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 392.3644809 V T = -25 °C: 356.3121896 V |
Voltage for Gain 150: |
T = +20 °C: 400.2818086 V T = -25 °C: 363.8652836 V |
Voltage for Gain 200: |
T = +20 °C: 404.672273 V T = -25 °C: 368.0792443 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.43173172 V-1 T = -25 °C: 4.638613181 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.72778458 V-1 T = -25 °C: 9.705858419 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.26704146 V-1 T = -25 °C: 15.02278997 V-1 |
Break-through voltage: |
T = +20 °C: 419.5944192 V T = -25 °C: 383.1228241 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history