Show Hamamatsu Avalanche Photo Diode 1411015916
This is all the information about APD 1411015916. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1411015916 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E10 |
Break-through voltage: |
420 V |
Voltage for Gain 100 (T=+25°C): |
392 V |
Dark current: |
5.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
309 |
Position in Box: |
17 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10382 |
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Shipment: |
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Grid number: |
394 |
Position in grid: |
11 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
20. Oct 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
19. Oct 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
392 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 392.3744959 V T = -25 °C: 355.8874488 V |
Voltage for Gain 150: |
T = +20 °C: 400.2831928 V T = -25 °C: 363.5218769 V |
Voltage for Gain 200: |
T = +20 °C: 404.6708655 V T = -25 °C: 367.7769262 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.442442474 V-1 T = -25 °C: 4.729458749 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.708245341 V-1 T = -25 °C: 8.727501939 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.26422265 V-1 T = -25 °C: 15.40613573 V-1 |
Break-through voltage: |
T = +20 °C: 419.7351007 V T = -25 °C: 383.1492697 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history