Show Hamamatsu Avalanche Photo Diode 1411015900
This is all the information about APD 1411015900. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1411015900 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G12 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
393.7 V |
| Dark current: |
6.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
335 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10503 |
| |
|
| Shipment: |
|
| Grid number: |
393 |
| Position in grid: |
15 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.6950475 V T = -25 °C: 359.5674886 V |
| Voltage for Gain 150: |
T = +20 °C: 402.5730565 V T = -25 °C: 367.1944278 V |
| Voltage for Gain 200: |
T = +20 °C: 406.9348154 V T = -25 °C: 371.5730288 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.65706564 V-1 T = -25 °C: 4.515651518 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.255107506 V-1 T = -25 °C: 8.337430973 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.53551297 V-1 T = -25 °C: 17.84850569 V-1 |
| Break-through voltage: |
T = +20 °C: 424.4686015 V T = -25 °C: 386.6579207 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
