Show Hamamatsu Avalanche Photo Diode 1411015877 - Archived data from Thu, 23. June 2016 10:39:42 CEST
This is all the information about APD 1411015877. If it is wrong, edit the data.
Subdetector specification: | |
---|---|
Serial: | 1411015877 |
Type: | Hamamatsu Avalanche Photo Diode |
Detector: | unassigned |
Unit: | unassigned |
Preamp: | 0 |
Current location: | unknown |
Installation information: | |
Label: | none |
Manufacturer information: | |
Wafer position: | D11 |
Break-through voltage: | 423 V |
Voltage for Gain 100 (T=+25°C): | 394.7 V |
Dark current: | 4.8 nA |
Screening Logistics: | |
Available: | Yes |
Storage Box: | none |
Position in Box: | none |
EP1 batch: | none |
EP1 batch after irradiation: | none |
Shipment: | |
Grid number: | none |
Position in grid: | none |
Arrival for irradiation: | none |
Sent for analysis after irradiation: | none |
Return for assembly: | none |
Irradiation: | |
Date: | none |
Dose used: | none |
Temperature: | none |
Position: | none |
Bias voltage: | none |
Annealing: | |
Date: | none |
Temperature: | none |
Duration: | none |
Measurement results: | |
Voltage for Gain 100: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 150: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 200: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 100: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 150: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 200: | T = +20 °C: none T = -25 °C: none |
Break-through voltage: | T = +20 °C: none T = -25 °C: none |
Notes: |
Version history
Time | Author | Change comment |
---|---|---|
18. Jan 2019 14:24:55 CET | markus.moritz | Entered shipped after irradiation date. |
03. Dec 2018 14:37:55 CET | markus.moritz | |
29. Sep 2017 13:37:44 CEST | markus.moritz | Entered arrival for irradiation date. |
01. Aug 2016 17:29:26 CEST | Tobias | Assigned to grid via information extracted from APD DB. |
23. Jun 2016 10:39:42 CEST | Tobias | Imported from Hamamatsu datasheet. |